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Siehe Technische Spezifikationen

PSMN020-100YS,115 +BOM

PSMN020 Series 100V N-Channel MOSFET

Hersteller:

Nexperia USA Inc.
Herstellerteil #:

PSMN020-100YS,115
Datenblatt:

PSMN020-100YS,115 Datenblatt (PDF)
Part Life Cycle Code:

Active
Pin Count:

4
Reach Compliance Code:

not_compliant
Avalanche Energy Rating (Eas):

71 mJ
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an PSMN020-100YS,115

Email: [email protected]

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Tel: +852 95804164

PSMN020-100YS,115 Allgemeine Beschreibung

Engineered to meet the stringent requirements of modern industries, the PSMN020-100YS,115 N-channel MOSFET is a top choice for engineers and designers looking for a dependable component for their projects. Its wide temperature tolerance and qualification make it a robust solution for challenging operating conditions, while its standardized design ensures compatibility with a range of devices and systems

Hauptmerkmale

Enhanced thermal management
Fast switching times achieved
High voltage handling capabilities

Anwendung

Long-lasting durability
Industry-leading design
Cost-effective solution

Spezifikationen

Source Content uid	PSMN020-100YS,115	Part Life Cycle Code	Active
Pin Count	4	Reach Compliance Code	not_compliant
Avalanche Energy Rating (Eas)	71 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	43 A	Drain-source On Resistance-Max	0.0205 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	MO-235
JESD-30 Code	R-PSSO-G4	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	4	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	172 A	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	20.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	2210 pF @ 50 V
Power Dissipation (Max)	106W (Tc)	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Base Product Number	PSMN020

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