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Siehe Technische Spezifikationen

RFD16N05SM9A +BOM

N-Channel Power MOSFET 50V, 16A, 47mΩ

Hersteller:

onsemi
Herstellerteil #:

RFD16N05SM9A
Datenblatt:

RFD16N05SM9A Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an RFD16N05SM9A

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

RFD16N05SM9A Allgemeine Beschreibung

Featuring a robust design, the RFD16N05SM9A N-channel power MOSFET is engineered for high-power field-effect transistor applications. It offers a high current rating of 16A and a maximum voltage of 50V, coupled with a low on-resistance of 0.047 ohms for optimal power efficiency. The MOSFET's single-element construction and N-channel configuration leverage silicon metal-oxide semiconductor technology to deliver reliable performance and longevity. Packaged in a user-friendly TO-252AA form factor, it ensures easy integration and effective thermal management in diverse power electronics setups

Hauptmerkmale

Advanced Power Control
High Voltage Tolerance
Low Noise Emissions
Wide Operating Range
High Efficiency Conversion

Anwendung

Efficient Server Power Management
Sleek & Modern Workstation
Mainframe for Enterprise Use

Spezifikationen

Source Content uid	RFD16N05SM9A	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	40 Weeks
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	50 V	Drain Current-Max (ID)	16 A
Drain-source On Resistance-Max	0.047 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252AA	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	72 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	50 V	Id - Continuous Drain Current	16 A
Rds On - Drain-Source Resistance	47 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2 V	Qg - Gate Charge	80 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	72 W	Channel Mode	Enhancement
Series	RFD16N05SM	Fall Time	30 ns
Height	2.39 mm	Length	6.73 mm
Product Type	MOSFET	Rise Time	30 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	55 ns	Typical Turn-On Delay Time	14 ns
Width	6.22 mm	Part # Aliases	RFD16N05SM9A_NL
Unit Weight	0.011640 oz

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..