Bezahlverfahren
SI2302DS,215 +BOM
3-Pin TO-236AB N-Channel MOSFET Transistor in Tape and Reel
TO-236-3,SC-59,SOT-23-3-
Hersteller:
NXP USA Inc.
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Herstellerteil #:
SI2302DS,215
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Datenblatt:
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Series:
TrenchMOS™
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
20 V
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EDA/CAD Modelle:
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Verfügbarkeit: 6729 Stck
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SI2302DS,215 Allgemeine Beschreibung
The SI2302DS is a N-channel MOSFET with a continuous drain current of 3.6A and a drain-source voltage of 20V. It has an on-resistance (Rds) of 0.056ohm and a threshold voltage of 650mV. With a power dissipation of 830mW, this transistor is designed for high-performance applications. It is housed in a SOT-23 case style and has 3 pins for easy connection. The SI2302DS has a maximum operating temperature of 150°C and can function in a wide temperature range from -65°C to +150°C. This surface mount device is ideal for automotive and other industrial applications. Its voltage characteristics include a Vds of 20V, a maximum Vgs of 650mV, and Rds on measurement at 4.5V
Hauptmerkmale
- TrenchMOS™ technology
- Very fast switching
- Logic level compatible
- Subminiature surface mount package.
Spezifikationen
Series | TrenchMOS™ | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 85mOhm @ 3.6A, 4.5V | Vgs(th) (Max) @ Id | 650mV @ 1mA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 10 V | Power Dissipation (Max) | 830mW (Tc) |
Operating Temperature | -65°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | SI2 |
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In Stock: 6.729
Minimum Order: 1
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