Bezahlverfahren
SI2319DDS-T1-GE3 +BOM
Small Signal Field-Effect Transistor, 3.6A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
SOT-
Hersteller:
VISHAY SILICONIX
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Herstellerteil #:
SI2319DDS-T1-GE3
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Datenblatt:
-
Part Life Cycle Code:
Active
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Reach Compliance Code:
compliant
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ECCN Code:
EAR99
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Factory Lead Time:
68 Weeks
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EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for SI2319DDS-T1-GE3, guaranteed quotes back within 12hr.
Verfügbarkeit: 3611 Stck
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SI2319DDS-T1-GE3 Allgemeine Beschreibung
The SI2319DDS-T1-GE3 power MOSFET from Vishay Siliconix is a versatile component that offers high performance and efficiency in a compact package. With a VDS rating of 20 volts and a low RDS(on) of 20 milliohms, this MOSFET is ideal for a wide range of power management applications, from portable electronics to automotive systems. Its small footprint and low gate charge ensure fast switching speeds and minimal power losses, making it a reliable choice for demanding environments
Hauptmerkmale
- Fast switching speed for efficient energy transfer
- Rise and fall times reduced for low EMI
- Voltage rating up to -20V for reliable performance
- P-channel MOSFET with low on-resistance
Spezifikationen
Part Life Cycle Code | Active | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 68 Weeks |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 40 V |
Drain Current-Max (ID) | 3.6 A | Drain-source On Resistance-Max | 0.075 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 43 pF |
JEDEC-95 Code | TO-236AB | JESD-30 Code | R-PDSO-G3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | P-CHANNEL | Power Dissipation-Max (Abs) | 1.7 W |
Surface Mount | YES | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Servicerichtlinien und andere
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In Stock: 3.611
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
5+ | $0,166 | $0,83 |
50+ | $0,144 | $7,20 |
150+ | $0,134 | $20,10 |
500+ | $0,122 | $61,00 |
3000+ | $0,117 | $351,00 |
6000+ | $0,114 | $684,00 |
Die unten angegebenen Preise dienen nur als Referenz.
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