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Trans MOSFET N-CH 100V 0.5A Automotive 4-Pin(3+Tab) SOT-223
TO-261-4,TO-261AAHersteller:
Diodes Incorporated
Herstellerteil #:
ZVN2110G
Datenblatt:
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
500mA (Ta)
EDA/CAD Modelle:
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The ZVN2110G MOSFET is a versatile semiconductor device suitable for a wide range of electronic applications. With a maximum drain-source voltage of 100V and a gate threshold voltage of 2.4V, this N-channel transistor can operate effectively in various voltage-controlled circuits. The SOT-223 package and SMD termination make for easy integration into compact PCB designs with limited space. The ZVN2110G's low on-resistance of 4ohm allows for efficient current conduction, while its 10V gate-source voltage ensures smooth switching performance. Whether used in power supplies, motor control circuits, or LED drivers, the ZVN2110G MOSFET offers reliable operation and long-term stability. Its 2W power dissipation rating and ability to handle pulsed currents up to 6A make it a robust solution for demanding applications where performance and reliability are key
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 1mA | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 75 pF @ 25 V | Power Dissipation (Max) | 2W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | ZVN2110 |
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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
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Menge. | Einzelpreis | Ext. Preis |
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