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Alle Ergebnisse für "7mb" ( 28 )
Beliebte Hersteller
- Artikelnummer
- Hersteller
- Beschreibung
- Datenblatt
- Betrieb
- 7MBR50VN120-50
- Fuji Electric Co Ltd
- Advanced power conversion technology for industrial control systems
- Datenblatt
- 7MBR15VKC120-50
- FUJITSU
- Insulated Gate Bipolar Transistor
- Datenblatt
- 7MBR35VKD120-50
- FUJITSU
- Insulated Gate Bipolar Transistor
- Datenblatt
- 7MBR50VP120-50
- Fuji Electric Co Ltd
- Compliant with RoHS environmental standards, ideal for sustainable design
- Datenblatt
- 7MBR25NE120
- Fuji Electric Co Ltd
- -pin module featuring a A current rating and kV blocking capability for demanding power electronic design
- Datenblatt
- 7MBR50SB-120-50
- FUJITSU
- Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel
- Datenblatt
- 7MBR50SB120-50
- Fuji Electric
- Rugged and reliable power device for industrial automation
- Datenblatt
- 7MBR30SA060
- FUJI ELECTRIC
- Three-phase bridge rectifier for DC power conversion solution
- Datenblatt
- 7MBR75VN120-50
- FUJI ELECTRIC
- Trans IGBT Module N-CH
- Datenblatt
- 7MBR35VA120-50
- FUJI ELECTRIC
- Insulated Gate Bipolar Transistor
- Datenblatt
- 7MBR50VM120-50
- FUJI ELECTRIC
- IGBT, 7 PK, V SER, 50A, 1200V, M719
- Datenblatt
- 7MBP75RA060
- Fuji Electric Co Ltd
- Transform your systems with the smart power management of BPR
- Datenblatt
- 7MBR50SB120
- Fuji Electric Co Ltd
- Robust N-channel transistor design for reliable performanc
- Datenblatt
- 7MBR25VP120-50
- Fuji Electric Co Ltd
- Durable and efficient DC/DC converter for demanding industrial and commercial use cases
- Datenblatt
- 7MBR30NF060
- Fuji Electric Co Ltd
- N-channel insulated gate bipolar transistor with high voltage toleranc
- Datenblatt
- 7MBR25NF120
- Fuji Electric Co Ltd
- N-channel IGBT capable of handling 25A current and sustaining 1200V voltage
- Datenblatt
- 7MBR35VM120-50
- Fuji Electric Co Ltd
- IGBT Power Module with Double Bridge Configuration, 35A, 1200V, V Series
- Datenblatt
- 7MBI100N-060
- Fuji Electric Co Ltd
- FUJI IGBT Module
- Datenblatt
- 7MBI75N-060
- Fuji Electric Co Ltd
- P607 Insulated Gate Bipolar Transistor capable of handling 75A current
- Datenblatt
- 7MBI50N-120
- Fuji Electric Co Ltd
- 0A 1200V IGBT Module with Diode
- Datenblatt