Bezahlverfahren
2N6661 +BOM
TO-5-3 MOSFETs ROHS
TO-39-3-
Hersteller:
-
Herstellerteil #:
2N6661
-
Datenblatt:
-
Technology:
Si
-
Mounting Style:
Through Hole
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Transistor Polarity:
N-Channel
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Number Of Channels:
1 Channel
-
EDA/CAD Modelle:
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Verfügbarkeit: 4888 Stck
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2N6661 Allgemeine Beschreibung
The 2N6661 is an N-channel enhancement-mode MOSFET transistor designed for various switching and amplification applications. It is capable of handling moderate voltage and current levels, making it suitable for a wide range of electronic circuits.
Hauptmerkmale
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Low CISS and fast switching speeds
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and high gain
Anwendung
- Switching Circuits: It can be used as a general-purpose switch to control the flow of current in electronic circuits.
- Amplification: The transistor can be used for small-signal amplification in audio and RF applications.
- Voltage Level Shifter: It can be used as a level shifter or voltage translator to interface between different voltage domains.
- Power Supplies: The 2N6661 can be used in power supply circuits for voltage regulation or switching purposes.
- Motor Control: It can be used in low-power motor control circuits.
- General Purpose Applications: It is suitable for various low- to moderate-power electronic circuits requiring an N-channel MOSFET.
Spezifikationen
Product Category: | MOSFET | Technology: | Si |
Mounting Style: | Through Hole | Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel | Vds - Drain-Source Breakdown Voltage: | 10 V |
Id - Continuous Drain Current: | 350 mA | Rds On - Drain-Source Resistance: | 4 Ohms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage: | 800 mV |
Qg - Gate Charge: | - | Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C | Pd - Power Dissipation: | 6.25 W |
Channel Mode: | Enhancement | Packaging: | Bulk |
Configuration: | Single | Forward Transconductance - Min: | 170 mS |
Product Type: | MOSFET | Factory Pack Quantity: | 500 |
Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
Type: | FET | Typical Turn-Off Delay Time: | 10 ns |
Typical Turn-On Delay Time: | 10 ns | Unit Weight: | 0.039133 oz |
feature-category | Power MOSFET | feature-material | Si |
feature-process-technology | DMOS | feature-configuration | Single |
feature-channel-mode | Enhancement | feature-channel-type | N |
feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 90 |
feature-maximum-gate-source-voltage-v | ±20 | feature-maximum-gate-threshold-voltage-v | |
feature-maximum-continuous-drain-current-a | 0.35 | feature-maximum-drain-source-resistance-mohm | 4000@10V |
feature-typical-gate-charge-vgs-nc | feature-typical-gate-charge-10v-nc | ||
feature-typical-input-capacitance-vds-pf | 50(Max)@24V | feature-typical-output-capacitance-pf | |
feature-maximum-power-dissipation-mw | 6250 | feature-packaging | Bag |
feature-rad-hard | feature-pin-count | 3 | |
feature-cecc-qualified | No | feature-esd-protection | |
feature-escc-qualified | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | No |
feature-svhc-exceeds-threshold | No |
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In Stock: 4.888
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
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1+ | - | - |
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