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Siehe Technische Spezifikationen

2N7002-G +BOM

60V, 7.5 Ohm, N-Channel, Enhancement-Mode, Vertical DMOS FET.

Hersteller:

MICROCHIP
Herstellerteil #:

2N7002-G
Datenblatt:

2N7002-G Datenblatt (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
Configuration:

SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:

60 V
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an 2N7002-G

2N7002-G Allgemeine Beschreibung

Featuring a vertical DMOS structure and silicon-gate manufacturing process, the 2N7002-G transistor is a versatile solution for applications requiring high power handling capabilities and fast switching speeds. This enhancement-mode transistor combines the strengths of bipolar transistors and MOS devices to deliver superior performance in terms of input impedance, threshold voltage, and breakdown voltage. Its low input capacitance and positive temperature coefficient ensure stable operation without the risk of thermal runaway or secondary breakdown. Whether used for switching or amplifying purposes, the 2N7002-G transistor excels in delivering precision and efficiency. With its fast switching speeds and high reliability, this transistor is a valuable asset for a wide range of electronic designs

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Spezifikationen

Source Content uid	2N7002-G	Part Life Cycle Code	Active
Reach Compliance Code	compliant	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	0.115 A
Drain-source On Resistance-Max	7.5 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	5 pF	JEDEC-95 Code	TO-236
JESD-30 Code	R-PDSO-G3	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	0.2 W	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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