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2N7002CK,215 +BOM

Single N-Channel 60 V 1.6 Ohm 1.3 nC 350 mW Silicon SMT Mosfet - SOT-23

2N7002CK,215 Allgemeine Beschreibung

The compact TO-236AB-3 package of the 2N7002CK,215 makes it easy to integrate into existing circuit designs, saving valuable board space and simplifying assembly. Its high drain source voltage tolerance and low threshold voltage ensure reliable operation even in demanding operating conditions. This MOSFET is a versatile component that offers excellent switching characteristics and low power dissipation for enhanced energy efficiency

Nexperia Inventar

Hauptmerkmale

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology
  • ESD protection up to 3 kV
Nexperia Originalbestand
Nexperia Inventar

Spezifikationen

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 300 mA Rds On - Drain-Source Resistance 1.6 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 1.3 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 350 mW
Channel Mode Enhancement Qualification AEC-Q101
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Part # Aliases 934063611215
Unit Weight 0.000282 oz Series TrenchMOS™
FET Type N-Channel Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.3 nC @ 4.5 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 55 pF @ 25 V Power Dissipation (Max) 350mW (Ta)
Operating Temperature 150°C (TJ) Grade Automotive
Mounting Type Surface Mount Base Product Number 2N7002

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