Bezahlverfahren
2N7002PS,115 +BOM
Transistor MOSFET Array Dual N-CH 60V 0.32A 6-Pin SOT-363 T/R
6-TSSOP-
Hersteller:
-
Herstellerteil #:
2N7002PS,115
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Datenblatt:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
N-Channel
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Number Of Channels:
2 Channel
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EDA/CAD Modelle:
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Verfügbarkeit: 7072 Stck
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2N7002PS,115 Allgemeine Beschreibung
For applications requiring a reliable and efficient N-channel MOSFET, the 2N7002PS,115 offers a range of features that make it a versatile choice. With a continuous drain current of 320mA and a drain source voltage of 60V, this transistor can handle a variety of load conditions. The on resistance of 1ohm and threshold voltage of 1.75V ensure low power losses and precise control over switching operations, while the 320mW power dissipation rating allows for stable performance under normal operating conditions. The SOT-363 case style with 6 pins makes it easy to integrate into existing circuit designs, while the wide operating temperature range of -55°C to +150°C ensures reliable operation in harsh environments. Whether used in single or dual module configurations, this MOSFET provides consistent performance and efficient power management for a range of applications
Hauptmerkmale
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- AEC-Q101 qualified
Spezifikationen
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 320 mA | Rds On - Drain-Source Resistance | 1 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1.1 V |
Qg - Gate Charge | 800 pC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 280 mW |
Channel Mode | Enhancement | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Part # Aliases | 934064134115 | Unit Weight | 0.000265 oz |
Configuration | 2 N-Channel (Dual) | FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V | Current - Continuous Drain (Id) @ 25°C | 320mA |
Rds On (Max) @ Id, Vgs | 1.6Ohm @ 500mA, 10V | Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 4.5V | Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V |
Power - Max | 420mW | Operating Temperature | 150°C (TJ) |
Grade | Automotive | Qualification | AEC-Q100 |
Mounting Type | Surface Mount | Base Product Number | 2N7002 |
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In Stock: 7.072
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
5+ | $0,099 | $0,50 |
50+ | $0,082 | $4,10 |
150+ | $0,072 | $10,80 |
500+ | $0,066 | $33,00 |
3000+ | $0,057 | $171,00 |
6000+ | $0,055 | $330,00 |
Die unten angegebenen Preise dienen nur als Referenz.