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High-performance transistors for efficient power transmissio
SMDHersteller:
Herstellerteil #:
CGH31240F
Datenblatt:
Shipping Restrictions:
This product may require additional documentation to export from the United States.
Transistor Type:
HEMT
Technology:
GaN
Operating Frequency:
2.7 GHz to 3.1 GHz
EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to
[email protected],
or fill below form to Quote for CGH31240F, guaranteed quotes back within
12hr.
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
RF Mosfet 28 V 1 A 2.7GHz ~ 3.1GHz 12dB 250W 440201
Product Category: | RF JFET Transistors | Shipping Restrictions: | This product may require additional documentation to export from the United States. |
Transistor Type: | HEMT | Technology: | GaN |
Operating Frequency: | 2.7 GHz to 3.1 GHz | Gain: | 12 dB |
Transistor Polarity: | N-Channel | Vds - Drain-Source Breakdown Voltage: | 120 V |
Vgs - Gate-Source Breakdown Voltage: | - 10 V to 2 V | Id - Continuous Drain Current: | 24 A |
Output Power: | 240 W | Maximum Drain Gate Voltage: | - |
Minimum Operating Temperature: | - 40 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 345 W | Mounting Style: | Flange Mount |
Packaging: | Tray | Application: | Radar |
Fall Time: | - | Forward Transconductance - Min: | - |
Height: | 3.76 mm | Length: | 24.33 mm |
Operating Temperature Range: | - | Product: | GaN HEMT |
Product Type: | RF JFET Transistors | Rise Time: | - |
Factory Pack Quantity: | 1 | Subcategory: | Transistors |
Type: | GaN SiC HEMT | Typical Turn-Off Delay Time: | - |
Vgs th - Gate-Source Threshold Voltage: | - 3 V | Width: | 23.62 mm |
Unit Weight: | 1.132118 oz |
After-Sales- und Abwicklungsbezogen
Bezahlverfahren
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Qualitätsgarantie
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1+ | - | - |
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