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FGD5T120SH +BOM

1.2kV IGBT Transistor capable of handling 5A current with 28W power dissipation, in DPAK package

FGD5T120SH Allgemeine Beschreibung

Designed with IGBT4 technology, the FGD5T120SH offers low conduction and switching losses, resulting in improved efficiency and reliability. Its low thermal resistance guarantees optimal thermal performance even under high load conditions. Additionally, the module features pressure contact technology for secure mounting on heatsinks and comes with pre-applied thermal interface material for enhanced heat dissipation

Spezifikationen

Status Active Case Outline 369AS
MSL Temp (°C) 245 Container Type REEL
Product Category: IGBT Transistors Technology: Si
Mounting Style: SMD/SMT Configuration: Single
Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 2.9 V
Maximum Gate Emitter Voltage: - 25 V, 25 V Continuous Collector Current at 25 C: 10 A
Pd - Power Dissipation: 69 W Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C Series: FGD5T120SH
Packaging: MouseReel Continuous Collector Current Ic Max: 10 A
Gate-Emitter Leakage Current: +/- 400 nA Product Type: IGBT Transistors
Factory Pack Quantity: 2500 Subcategory: IGBTs
Unit Weight: 0.009184 oz feature-technology Trench
feature-channel-type N feature-configuration Single
feature-maximum-gate-emitter-voltage-v ±25 feature-maximum-collector-emitter-voltage-v 1200
feature-maximum-continuous-collector-current-a 10 feature-maximum-power-dissipation-mw 69
feature-packaging Tape and Reel feature-rad-hard
feature-pin-count 3 feature-cecc-qualified No
feature-esd-protection feature-military No
feature-aec-qualified No feature-aec-qualified-number
feature-auto-motive No feature-p-pap No
feature-eccn-code EAR99 feature-svhc Yes
feature-svhc-exceeds-threshold Yes

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Bewertungen und Rezensionen

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N**s 02.19.2024

not tested. packaged so good

6

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FGD5T120SH Datenblatt PDF

Preliminary Specification FGD5T120SH PDF Herunterladen

FGD5T120SH PDF Vorschau