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Siehe Technische Spezifikationen

FQD1N60C +BOM

MOSFET QFC 600V 11.5OHM DPAK

Hersteller:

FAIRCHILD
Herstellerteil #:

FQD1N60C
Datenblatt:

FQD1N60C Datenblatt (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Additional Feature:

AVALANCHE RATED, FAST SWITCHING
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FQD1N60C

FQD1N60C Allgemeine Beschreibung

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Hauptmerkmale

1A, 600V, R_DS(on) = 11.5Ω(Max.) @V_GS = 10 V, I_D = 0.5A
Low gate charge ( Typ. 4.8nC)
Low C_rss ( Typ. 3.5pF)
100% avalanche tested
RoHS compliant

Anwendung

Lighting

Spezifikationen

Source Content uid	FQD1N60C	Part Life Cycle Code	Obsolete
Reach Compliance Code	compliant	ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, FAST SWITCHING	Avalanche Energy Rating (Eas)	33 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	1 A
Drain-source On Resistance-Max	11.5 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252	JESD-30 Code	R-PSSO-G2
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	4 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	1 A	Rds On - Drain-Source Resistance	11.5 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.5 W
Channel Mode	Enhancement	Series	QFET
Fall Time	27 ns	Height	2.39 mm
Length	6.73 mm	Product Type	MOSFET
Rise Time	21 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	13 ns	Typical Turn-On Delay Time	7 ns
Width	6.22 mm	Unit Weight	0.011640 oz

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