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IRF230 +BOM

IRF230 MOSFET: N-channel TO-3 type with 200V voltage rating, 9A current capacity, and 400mΩ resistance at 5A and 10V

Hersteller:

Infineon
Herstellerteil #:

IRF230
Datenblatt:

IRF230 Datenblatt (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IRF230

IRF230 Allgemeine Beschreibung

When it comes to high-speed power switching, the IRF230 power MOSFET is a top choice for engineers and designers working on electronic projects. Its N-channel design, with a drain-source voltage rating of 200 volts and a continuous drain current rating of 0.69 amperes, offers the performance and reliability needed for a wide range of applications. The low on-resistance of 4.5 ohms ensures efficient power switching operations in motor control, power supplies, lighting, inverters, and more. Additionally, the IRF230 features a gate threshold voltage of 2.0 volts, making it compatible with logic level drive circuits. Constructed using advanced technology, this MOSFET provides high switching performance and reliability, with a TO-39 package for easy mounting on printed circuit boards or heatsinks. Its fast switching speed and low on-resistance also make it suitable for use in audio amplifiers, RF amplifiers, and other high-frequency applications

Hauptmerkmale

New generation of power electronics
High-performance motor control
Efficient power conversion solutions

Anwendung

Instrumentation systems
Sensor networks
Power conditioning

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	9 A	Rds On - Drain-Source Resistance	490 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	75 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	40 ns	Height	7.74 mm
Length	39.37 mm	Product Type	MOSFET
Rise Time	80 ns	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	60 ns
Typical Turn-On Delay Time	35 ns	Width	25.53 mm
Unit Weight	0.229281 oz

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R**t 06.28.2020

Normal goods and shipping. Magnetize. Thank you.