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2W power dissipation with a low ON-resistance of 29mΩ at 5.8A and 10V
SOIC-8Hersteller:
Infineon
Herstellerteil #:
IRF7313PBF
Datenblatt:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel
Number Of Channels:
2 Channel
EDA/CAD Modelle:
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The IRF7313PBF is a dual N and P-channel power MOSFET featuring a low on-resistance and high drain-source voltage, making it suitable for high-speed switching applications. Its SO-8 package type ensures efficient heat dissipation, making it ideal for use in power management circuits, motor control, and DC-DC converters where space and power efficiency are critical. With a continuous drain current of 3.6 amps for the N-channel and 2.9 amps for the P-channel, this dual MOSFET is designed to deliver high performance and reliability
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 6.5 A | Rds On - Drain-Source Resistance | 46 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 22 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2 W | Channel Mode | Enhancement |
Configuration | Dual | Fall Time | 17 ns |
Height | 1.75 mm | Length | 4.9 mm |
Product Type | MOSFET | Rise Time | 8.9 ns |
Factory Pack Quantity | 3800 | Subcategory | MOSFETs |
Transistor Type | 2 N-Channel | Type | Power MOSFET |
Typical Turn-Off Delay Time | 26 ns | Typical Turn-On Delay Time | 8.1 ns |
Width | 3.9 mm | Part # Aliases | SP001566122 |
Unit Weight | 0.019048 oz |
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Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $1,562 | $1,56 |
200+ | $0,606 | $121,20 |
500+ | $0,584 | $292,00 |
1000+ | $0,574 | $574,00 |
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