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Siehe Technische Spezifikationen

IRFR9120NPBF +BOM

IRFR9120NPBF is a high-quality P Channel MOSFET suitable for a variety of applications

Hersteller:

International Rectifier
Herstellerteil #:

IRFR9120NPBF
Datenblatt:

IRFR9120NPBF Datenblatt (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Additional Feature:

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IRFR9120NPBF

IRFR9120NPBF Allgemeine Beschreibung

The IRFR9120NPBF power field-effect transistor is optimized for efficient power management in electronic devices requiring up to 100V and 6.6A of current handling capacity. Its P-channel design and low on-resistance make it suitable for voltage regulation, motor control, and other power control applications. The TO-252AA package simplifies installation and enhances thermal performance, while the lead-free and plastic construction ensures environmental compliance. With its high reliability and cost-effective design, the IRFR9120NPBF is a versatile solution for a wide range of power delivery needs

Spezifikationen

Source Content uid	IRFR9120NPBF	Part Life Cycle Code	Obsolete
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	Avalanche Energy Rating (Eas)	100 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V	Drain Current-Max (ID)	6.6 A
Drain-source On Resistance-Max	0.48 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252AA	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Power Dissipation-Max (Abs)	39 W
Pulsed Drain Current-Max (IDM)	26 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN OVER NICKEL
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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