Bezahlverfahren
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
Chip Transistor with Negative Channel for IGBT
TO-247-3Hersteller:
International Rectifier
Herstellerteil #:
IRG4PH50UDPBF
Datenblatt:
Part Life Cycle Code:
Obsolete
Reach Compliance Code:
compliant
ECCN Code:
EAR99
Date Of Intro:
1997-03-27
EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to
[email protected],
or fill below form to Quote for IRG4PH50UDPBF, guaranteed quotes back within
12hr.
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
Designed for high-power applications, the IRG4PH50UDPBF IGBT offers a balance of performance and efficiency. The 1200V breakdown voltage provides reliable protection against voltage fluctuations, while the low saturation voltage of 2.56V minimizes power losses during operation. The fast current release time of 180ns allows for quick response times, making it suitable for applications that require rapid switching. With a power dissipation capability of 200W, this IGBT can handle demanding loads while maintaining stable performance
Source Content uid | IRG4PH50UDPBF | Part Life Cycle Code | Obsolete |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Date Of Intro | 1997-03-27 | Additional Feature | ULTRA FAST |
Case Connection | COLLECTOR | Collector Current-Max (IC) | 45 A |
Collector-Emitter Voltage-Max | 1200 V | Configuration | SINGLE WITH BUILT-IN DIODE |
JEDEC-95 Code | TO-247AC | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 | Number of Elements | 1 |
Number of Terminals | 3 | Polarity/Channel Type | N-CHANNEL |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | MATTE TIN OVER NICKEL | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | POWER CONTROL |
Transistor Element Material | SILICON | Turn-off Time-Nom (toff) | 570 ns |
Turn-on Time-Nom (ton) | 73 ns |
After-Sales- und Abwicklungsbezogen
Bezahlverfahren
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | - | - |
Die unten angegebenen Preise dienen nur als Referenz.
2N2222
Stmicroelectronics
1000+ $0,587
BC547
Onsemi
NPN Epitaxial Silicon Transistor
ULN2003
Onsemi
Versatile device for driving heavy loads and motor
IRF3205
Infineon
TO-220AB Tube Power Transistor with N-Channel Silicon
TAN15
Microchip
The TAN is a robust NPN transistor designed for high-frequency applications, capable of operating at up to V and continuous curren