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Siehe Technische Spezifikationen

RFD15P05 +BOM

Power P-Channel MOSFET TO-251AA

Hersteller:

Onsemi
Herstellerteil #:

RFD15P05
Datenblatt:

RFD15P05 Datenblatt (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an RFD15P05

RFD15P05 Allgemeine Beschreibung

The RFD15P05 Power MOSFET, a product of Fairchild Semiconductor (now part of ON Semiconductor), is a powerhouse component tailored for high-speed switching needs in power electronics. Boasting a low on-resistance of approximately 0.150 ohms and a robust 50-volt drain-source voltage handling capability, this transistor is a reliable choice for applications requiring efficient power management. Its fast switching speed and enhanced thermal performance cater to systems demanding rapid on/off cycles and effective heat dissipation, respectively. Housed in the commonly used TO-220AB package, the RFD15P05 is readily available through various distributors and online platforms, ensuring easy accessibility for engineers and designers. Dive into the datasheet provided by the manufacturer for detailed specifications, electrical characteristics, and practical application guidance, empowering you to leverage the full potential of this exceptional MOSFET

Hauptmerkmale

Thermal stability and easy mounting
Suitable for a wide range of applications.

Anwendung

High-power motor control
Robust automotive systems
Reliable power management

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	50 V
Id - Continuous Drain Current	15 A	Rds On - Drain-Source Resistance	150 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	80 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	20 ns	Height	6.3 mm
Length	6.8 mm	Product Type	MOSFET
Rise Time	30 ns	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	50 ns
Typical Turn-On Delay Time	16 ns	Width	2.5 mm
Unit Weight	0.011993 oz

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..