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TO-220AB Package Type
TO-220ABHersteller:
HARRIS SEMICONDUCTOR
Herstellerteil #:
RFP12P08
Datenblatt:
Part Life Cycle Code:
Obsolete
ECCN Code:
EAR99
HTS Code:
8541.29.00.95
Case Connection:
DRAIN
EDA/CAD Modelle:
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12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETsThe RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistorsdesigned for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.Features• 12A, 80V and 100V• rDS(ON)= 0.300Ω• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Majority Carrier Device• Related Literature- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Part Life Cycle Code | Obsolete | Reach Compliance Code | |
ECCN Code | EAR99 | HTS Code | 8541.29.00.95 |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 80 V | Drain Current-Max (Abs) (ID) | 12 A |
Drain Current-Max (ID) | 12 A | Drain-source On Resistance-Max | 0.3 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 300 pF |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e0 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Polarity/Channel Type | P-CHANNEL |
Power Dissipation Ambient-Max | 75 W | Power Dissipation-Max (Abs) | 75 W |
Pulsed Drain Current-Max (IDM) | 30 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | TIN LEAD |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Turn-off Time-Max (toff) | 450 ns | Turn-on Time-Max (ton) | 235 ns |
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