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N-channel 620 V, 950 mOhm, 5.5 A SuperMESH3 K3 Power MOSFET in a DPAK package
DPAKHersteller:
STMicroelectronics
Herstellerteil #:
STD6N62K3
Datenblatt:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Modelle:
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The STD6N62K3 is a robust N-channel power MOSFET manufactured by STMicroelectronics for efficient power management applications. With a high drain-source voltage rating of 620 volts and a maximum continuous drain current of 6.1 amperes, this MOSFET is well-suited for high-voltage applications that demand reliable and efficient power handling capabilities. As part of STMicroelectronics' STPOWER family, it offers superior performance and meets the stringent requirements of various power management applications. The "K3" suffix in its part number denotes specific variations or enhancements in its design or packaging, providing engineers with options to address different application needs
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 5.5 A | Rds On - Drain-Source Resistance | 1.28 Ohms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 34 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 90 W |
Channel Mode | Enhancement | Tradename | MDmesh |
Series | STD6N62K3 | Configuration | Single |
Fall Time | 19 ns | Height | 2.4 mm |
Length | 6.6 mm | Product Type | MOSFET |
Rise Time | 12.5 ns | Factory Pack Quantity | 2500 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 27 ns | Typical Turn-On Delay Time | 13 ns |
Width | 6.2 mm | Unit Weight | 0.011640 oz |
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