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60V, 3 Ohm, N-Channel, Enhancement-Mode, Vertical DMOS FET.
TO-205AD (TO-39)Hersteller:
Solid State Inc.
Herstellerteil #:
2N6660
Datenblatt:
Part Life Cycle Code:
Active
Reach Compliance Code:
compliant
ECCN Code:
EAR99
HTS Code:
8542.39.00.01
EDA/CAD Modelle:
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The 2N6660 is a cutting-edge enhancement-mode transistor that capitalizes on vertical DMOS technology and a time-tested silicon-gate manufacturing process. This winning combination results in a device that boasts the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices. Thanks to its MOS structure, the 2N6660 is immune to thermal runaway and thermally-induced secondary breakdown. This makes it an excellent choice for a wide range of switching and amplifying applications, where low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are crucial. Whether you need a reliable component for your next electronics project or a dependable solution for industrial applications, the 2N6660 is up to the task
Source Content uid | 2N6660 | Part Life Cycle Code | Active |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code | 8542.39.00.01 | Factory Lead Time | 4 Weeks |
Additional Feature | HIGH INPUT IMPEDANCE | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 0.41 A | Drain-source On Resistance-Max | 3 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 10 pF |
JEDEC-95 Code | TO-39 | JESD-30 Code | O-MBCY-W3 |
JESD-609 Code | e4 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Polarity/Channel Type | N-CHANNEL | Power Dissipation Ambient-Max | 6.25 W |
Power Dissipation-Max (Abs) | 6.25 W | Pulsed Drain Current-Max (IDM) | 3 A |
Qualification Status | Not Qualified | Reference Standard | TS 16949 |
Surface Mount | NO | Terminal Finish | NICKEL GOLD |
Terminal Form | WIRE | Terminal Position | BOTTOM |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Turn-off Time-Max (toff) | 10 ns | Turn-on Time-Max (ton) | 10 ns |
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Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $22,703 | $22,70 |
30+ | $21,782 | $653,46 |
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