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Siehe Technische Spezifikationen

2N7000-D26Z +BOM

N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω

Hersteller:

onsemi
Herstellerteil #:

2N7000-D26Z
Datenblatt:

2N7000-D26Z Datenblatt (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an 2N7000-D26Z

2N7000-D26Z Allgemeine Beschreibung

Leveraging the latest in DMOS technology, the 2N7000-D26Z N-channel Small Signal MOSFETs from ON Semiconductor are designed to excel in minimizing on-state resistance and facilitating rapid switching. Their ability to handle currents up to 400 mA DC and 2 A in pulsed form makes them versatile across various projects. Known for their reliability and robustness, these MOSFETs are dependable components for applications where consistent performance is crucial. Their affinity for low-voltage and low-current setups further adds to their appeal, making them a go-to choice for engineers aiming for efficiency and performance

Hauptmerkmale

Advanced Power Management
Rapid Switching Performance
Low Voltage Drop-out Regulation
Fault Tolerant and Reliable Operation
High Efficiency and Low Quiescent Current
Excellent Frequency Response and Noise Rejection

Anwendung

Temperature Sensor Interface
PWM Signal Generation
Brushless Motor Commutation

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	200 mA	Rds On - Drain-Source Resistance	1.2 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	800 mV
Qg - Gate Charge	-	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	400 mW
Channel Mode	Enhancement	Series	2N7000
Configuration	Single	Forward Transconductance - Min	0.1 S
Height	5.33 mm	Length	5.2 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Factory Pack Quantity	2000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Width	4.19 mm
Part # Aliases	2N7000_D26Z	Unit Weight	0.007090 oz

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..