Bezahlverfahren
2N7000TA +BOM
N-Channel Power MOSFET
TO-226-3,TO-92-3(TO-226AA)FormedLeads-
Hersteller:
onsemi
-
Herstellerteil #:
2N7000TA
-
Datenblatt:
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain To Source Voltage (Vdss):
60 V
-
Current - Continuous Drain (Id) @ 25°C:
200mA (Tc)
-
EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for 2N7000TA, guaranteed quotes back within 12hr.
Verfügbarkeit: 7701 Stck
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
2N7000TA Allgemeine Beschreibung
This N-channel MOSFET transistor, known as the 2N7000TA, is designed to handle a continuous drain current of 200mA and a drain-source voltage of 60V. With an on-resistance of 5ohm at a test voltage of 10V, it also features a threshold voltage of 3.9V. Housed in a TO-226AA case style with 3 pins, this transistor has a power dissipation rating of 400mW and can operate at a maximum temperature of 150°C. Classified as not containing any SVHC, this product does not meet any automotive qualification standard or have an assigned MSL level
Hauptmerkmale
- Fast switching
- Lower input capacitance
- Extended safe operating area
- Improved inductive ruggedness
- Improved high temperature reliability
Anwendung
- Power Management
- Motor Drive & Control
- Industrial
Spezifikationen
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V | Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V | Power Dissipation (Max) | 400mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Base Product Number | 2N7000 |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
In Stock: 7.701
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | - | - |
Die unten angegebenen Preise dienen nur als Referenz.
Empfohlene Produkte
Top Sellers
-
2N2222
Stmicroelectronics
1000+ $0,587
-
BC547
Onsemi
NPN Epitaxial Silicon Transistor
-
ULN2003
Onsemi
Versatile device for driving heavy loads and motor
-
IRF3205
Infineon
TO-220AB Tube Power Transistor with N-Channel Silicon
-
TAN15
Microchip
The TAN is a robust NPN transistor designed for high-frequency applications, capable of operating at up to V and continuous curren