Bezahlverfahren
2N7002 TR +BOM
MOSFET N-Type with a maximum voltage of 60V and a current rating of 0.2A
TO-236-3,SC-59,SOT-23-3-
Hersteller:
Central Semiconductor Corp
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Herstellerteil #:
2N7002 TR
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Datenblatt:
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
60 V
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Current - Continuous Drain (Id) @ 25°C:
115mA (Tc)
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EDA/CAD Modelle:
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Verfügbarkeit: 9715 Stck
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2N7002 TR Allgemeine Beschreibung
With its impressive specifications and reliable performance, the 2N7002 TR is a versatile and valuable addition to any electronic design. Whether it's for switching or amplifying applications, this MOSFET transistor delivers the performance and efficiency needed to meet the demands of modern electronics. Its compact form factor, wide operating temperature range, and high-frequency capabilities make it an excellent choice for a wide range of applications where reliable and efficient power management is essential
Hauptmerkmale
- Low On-Resistance: 2.5 Ω
- Low Threshold: 2.1 V
- Low Input Capacitance: 22 pF
- Fast Switching Speed: 7 ns
- Low Input and Output Leakage
- BENEFITS
- Low Offset Voltage
- Low-Voltage Operation
- Easily Driven Without Buffer
- High-Speed Circuits
- Low Error Voltage
Spezifikationen
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V | Current - Continuous Drain (Id) @ 25°C | 115mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | Rds On (Max) @ Id, Vgs | 7.5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | Vgs (Max) | 40V |
Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V | Power Dissipation (Max) | 350mW (Ta) |
Operating Temperature | -65°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | 2N7002 |
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In Stock: 9.715
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
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1+ | - | - |
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