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Siehe Technische Spezifikationen

2N7002HR +BOM

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Hersteller:

Nexperia Semiconductor (NXP)
Herstellerteil #:

2N7002HR
Datenblatt:

2N7002HR Datenblatt (PDF)
Id:

http://www.data.nexperia.com/id/plm/salesItem/934661228215
Nc12:

934661228215
PackingDescription:

Reel 7" Q3/T4
PackingQuantity:

3,000
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an 2N7002HR

2N7002HR Allgemeine Beschreibung

When it comes to selecting a dependable FET for diverse applications, the 2N7002HR stands out for its impressive specifications. With a 60-volt drain-source voltage rating and a continuous drain current of 115 mA, this N-channel enhancement mode field-effect transistor (FET) is designed to meet the requirements of high-speed switching applications. The FET's low threshold voltage of 1 volt is particularly beneficial for low-power applications where efficiency is a priority. Additionally, the 2N7002HR's low on-resistance of 7 ohms enhances its performance in reducing power dissipation and increasing efficiency in high-speed switching circuits. Its compact SOT-23 package further adds to its appeal for surface mount applications in various industries

Hauptmerkmale

Suitable for automotive use
Low power consumption guaranteed
Rapidly charging and discharging
Excellent thermal stability

Nexperia Semiconductor (NXP) Originalbestand

Anwendung

Audio amplifier
Voltage regulator
Motion sensor
Signal conditioner

Spezifikationen

id	http://www.data.nexperia.com/id/plm/salesItem/934661228215	nc12	934661228215
name	2N7002HR	packingDescription	Reel 7" Q3/T4
packingQuantity	3,000	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	360 mA
Rds On - Drain-Source Resistance	1.6 Ohms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.4 V	Qg - Gate Charge	300 pC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	420 mW	Channel Mode	Enhancement
Configuration	Single	Fall Time	4 ns
Product Type	MOSFET	Rise Time	3 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Typical Turn-Off Delay Time	6 ns	Typical Turn-On Delay Time	2 ns
Part # Aliases	934661228215

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