Bezahlverfahren
2N7002KQ-7 +BOM
N-channel MOSFET with a maximum voltage rating of 60V and a current rating of 0.38A, operating up to 150°C, compliant with RoHS regulations
SOT23-3-
Hersteller:
Diodes Incorporated
-
Herstellerteil #:
2N7002KQ-7
-
Datenblatt:
-
Technology:
Si
-
Mounting Style:
SMD/SMT
-
Transistor Polarity:
N-Channel
-
Number Of Channels:
1 Channel
-
EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for 2N7002KQ-7, guaranteed quotes back within 12hr.
Verfügbarkeit: 7072 Stck
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
2N7002KQ-7 Allgemeine Beschreibung
N-Channel 60 V 380mA (Ta) 370mW (Ta) Surface Mount SOT-23-3
Hauptmerkmale
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected Up To 2kV
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- The 2N7002KQ is suitable for automotive applications
- requiring specific change control; it is AEC-Q101 qualified,
- PPAP capable, and manufactured in IATF 16949 certified
- facilities.
Spezifikationen
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 380 mA | Rds On - Drain-Source Resistance | 2 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1.6 V |
Qg - Gate Charge | 300 pC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 540 mW |
Channel Mode | Enhancement | Fall Time | 9.9 ns |
Product Type | MOSFET | Rise Time | 3.4 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 15.7 ns | Typical Turn-On Delay Time | 3.9 ns |
FET Type | N-Channel | Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 380mA (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V | Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 0.3 nC @ 4.5 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V | Power Dissipation (Max) | 370mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | 2N7002 |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
In Stock: 7.072
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | - | - |
Die unten angegebenen Preise dienen nur als Referenz.
Empfohlene Produkte
Top Sellers
-
2N2222
Stmicroelectronics
1000+ $0,587
-
BC547
Onsemi
NPN Epitaxial Silicon Transistor
-
ULN2003
Onsemi
Versatile device for driving heavy loads and motor
-
IRF3205
Infineon
TO-220AB Tube Power Transistor with N-Channel Silicon
-
TAN15
Microchip
The TAN is a robust NPN transistor designed for high-frequency applications, capable of operating at up to V and continuous curren