Bezahlverfahren
2N7002KT7G +BOM
This product, labeled as 2N7002KT7G, is a N-type Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) suitable for switching applications
TO-236-3,SC-59,SOT-23-3-
Hersteller:
onsemi
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Herstellerteil #:
2N7002KT7G
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Datenblatt:
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
60 V
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Current - Continuous Drain (Id) @ 25°C:
320mA (Ta)
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EDA/CAD Modelle:
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Verfügbarkeit: 8587 Stck
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2N7002KT7G Allgemeine Beschreibung
The 2N7002KT7G from ON Semiconductor is a powerful N-channel enhancement mode Field-Effect Transistor (FET) designed for use in a wide range of electronic devices. With a maximum drain-source voltage (Vds) of 60V, this FET is capable of handling low power, high speed switching applications with ease. Its maximum drain current (Id) of 300mA makes it suitable for use in many low voltage applications, while its low on-resistance (Rds(on)) of 5 ohms ensures efficient switching and minimal power loss. Housed in a compact SOT-23 package, this FET is perfect for space-constrained applications where board space is limited. Additionally, with a gate threshold voltage (Vgs(th)) of 1 to 2.5V, the 2N7002KT7G can be easily driven by most logic level signals, making it extremely versatile. Furthermore, its fast switching speed and low gate charge make it ideal for high frequency applications, ensuring reliable and efficient performance
Spezifikationen
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V | Current - Continuous Drain (Id) @ 25°C | 320mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 1.6Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 0.7 nC @ 4.5 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 24.5 pF @ 20 V |
Power Dissipation (Max) | 300mW (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | 2N7002 |
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In Stock: 8.587
Minimum Order: 1
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