Bezahlverfahren
2N7002NXBKR +BOM
MOSFETs with null SOT-23 packaging and a maximum voltage rating of 60V
TO-236-3,SC-59,SOT-23-3-
Hersteller:
Nexperia USA Inc.
-
Herstellerteil #:
2N7002NXBKR
-
Datenblatt:
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain To Source Voltage (Vdss):
60 V
-
Current - Continuous Drain (Id) @ 25°C:
270mA (Ta), 330mA (Tc)
-
EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for 2N7002NXBKR, guaranteed quotes back within 12hr.
Verfügbarkeit: 8770 Stck
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
2N7002NXBKR Allgemeine Beschreibung
The 2N7002NXBKR is a compact N-channel MOSFET transistor specifically designed for low-voltage applications, offering unparalleled efficiency and reliability. Manufactured by On Semiconductor, this surface-mount package transistor is perfect for switching circuits that require minimal power consumption. With a maximum drain-source voltage of 60V and continuous drain current of 300mA, the 2N7002NXBKR is an ideal choice for many low-power applications
Hauptmerkmale
- Fast recovery time
- Low leakage current
- Trench design optimized
- ESD protected up to 1kV
Anwendung
- Power supply controller
- Motor driver
- LED dimmer
Spezifikationen
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V | Current - Continuous Drain (Id) @ 25°C | 270mA (Ta), 330mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | Rds On (Max) @ Id, Vgs | 2.8Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 1 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 23.6 pF @ 10 V |
Power Dissipation (Max) | 310mW (Ta), 1.67W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | 2N7002 |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
In Stock: 8.770
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
10+ | $0,038 | $0,38 |
100+ | $0,031 | $3,10 |
300+ | $0,027 | $8,10 |
3000+ | $0,023 | $69,00 |
6000+ | $0,021 | $126,00 |
9000+ | $0,020 | $180,00 |
Die unten angegebenen Preise dienen nur als Referenz.
Empfohlene Produkte
Top Sellers
-
2N2222
Stmicroelectronics
1000+ $0,587
-
BC547
Onsemi
NPN Epitaxial Silicon Transistor
-
ULN2003
Onsemi
Versatile device for driving heavy loads and motor
-
IRF3205
Infineon
TO-220AB Tube Power Transistor with N-Channel Silicon
-
TAN15
Microchip
The TAN is a robust NPN transistor designed for high-frequency applications, capable of operating at up to V and continuous curren