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N-type MOSFET transistor with a 30V voltage rating and 23A current rating
8-PowerTDFNHersteller:
Infineon Technologies
Herstellerteil #:
BSC030N03LS G
Datenblatt:
Series:
OptiMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
30 V
EDA/CAD Modelle:
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III. The BSC030N03LS G stands as a testament to Infineon Technologies' commitment to excellence—this N-channel Power MOSFET is purpose-built for high voltage and high speed switching applications. Featuring a maximum drain-source voltage of 30V and a continuous drain current of 75A, it seamlessly accommodates a diverse array of power management tasks. Its remarkably low on-resistance of 3.9 mΩ ensures highly efficient power conversion with minimal energy losses. Housed in a TO-263-3 package with three leads, the BSC030N03LS G allows for straightforward installation on printed circuit boards. With a gate-source voltage of ±20V, it guarantees compatibility with standard drive circuits. Notably, this MOSFET is engineered to thrive in challenging environments, boasting a wide operating temperature range of -55°C to 175°C. Additionally, it is RoHS compliant, underlining its environmentally friendly and safe nature, making it an ideal choice for a wide range of electronic devices
Series | OptiMOS™ | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 100A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3mOhm @ 30A, 10V | Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 15 V | Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | BSC030 |
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