Bezahlverfahren
BSC032N03SG +BOM
High Current Switch
8-PowerTDFN-
Hersteller:
Infineon Technologies
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Herstellerteil #:
BSC032N03SG
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Datenblatt:
-
Series:
OptiMOS™
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
30 V
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EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for BSC032N03SG, guaranteed quotes back within 12hr.
Verfügbarkeit: 9280 Stck
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BSC032N03SG Allgemeine Beschreibung
The BSC032N03SG from Infineon Technologies is a high-performance N-channel Power MOSFET transistor suitable for demanding applications in automotive, industrial, and consumer electronics. With a Vds of 30V and Id of 70A, it is designed to handle high current and high voltage requirements. Its low Rds(on) of 3.2 mΩ minimizes power losses and maximizes efficiency in power conversion applications. Additionally, the low gate charge of 37 nC enables fast switching speeds and reduced switching losses, making it ideal for high-frequency applications. Housed in a TO-263 package, the BSC032N03SG offers excellent thermal performance and easy mounting on a PCB. Furthermore, its RoHS compliance ensures that it meets stringent environmental standards, making it a reliable and environmentally friendly choice for power MOSFET applications
Spezifikationen
Series | OptiMOS™ | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 100A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3.2mOhm @ 50A, 10V | Vgs(th) (Max) @ Id | 2V @ 70µA |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 5 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5080 pF @ 15 V | Power Dissipation (Max) | 2.8W (Ta), 78W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
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In Stock: 9.280
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | - | - |
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