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Transistor MOSFET N-channel with 80V voltage rating
8-PowerTDFNHersteller:
Infineon Technologies
Herstellerteil #:
BSC047N08NS3 G
Datenblatt:
Series:
OptiMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
80 V
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Infineon Technologies' BSC047N08NS3 G stands out as a reliable N-channel power MOSFET tailored for a diverse set of applications, including DC-DC converters, motor control, and power supplies. With a maximum continuous drain current of 47A and a maximum drain-source voltage of 80V, this MOSFET is well-equipped to handle high-power requirements with ease. Its low on-state resistance of 8mΩ ensures minimal power losses and heightened efficiency, especially in high-current scenarios. Furthermore, the gate threshold voltage of 2.5V and gate charge of 58nC facilitate seamless integration with standard digital logic circuits, streamlining the design and implementation process. The low input capacitance of 2850pF and fast switching speed further enhance its suitability for high-frequency operations, making it a versatile choice for a wide range of applications
Series | OptiMOS™ | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 80 V |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 100A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 4.7mOhm @ 50A, 10V | Vgs(th) (Max) @ Id | 3.5V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 40 V | Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | BSC047 |
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