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BSC047N08NS3 G +BOM

Transistor MOSFET N-channel with 80V voltage rating

BSC047N08NS3 G Allgemeine Beschreibung

Infineon Technologies' BSC047N08NS3 G stands out as a reliable N-channel power MOSFET tailored for a diverse set of applications, including DC-DC converters, motor control, and power supplies. With a maximum continuous drain current of 47A and a maximum drain-source voltage of 80V, this MOSFET is well-equipped to handle high-power requirements with ease. Its low on-state resistance of 8mΩ ensures minimal power losses and heightened efficiency, especially in high-current scenarios. Furthermore, the gate threshold voltage of 2.5V and gate charge of 58nC facilitate seamless integration with standard digital logic circuits, streamlining the design and implementation process. The low input capacitance of 2850pF and fast switching speed further enhance its suitability for high-frequency operations, making it a versatile choice for a wide range of applications

Hauptmerkmale

  • Fast switching MOSFET for SMPS
  • Optimized technology for DC/DC converters
  • Qualified according to JEDEC1) for target applications
  • N-channel; Logic level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • Superior thermal resistance
  • Avalanche rated
  • Pb-free plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21

Spezifikationen

Series OptiMOS™ FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 40 V Power Dissipation (Max) 2.5W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number BSC047

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