Bezahlverfahren
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
The BSC119N03S MOSFET is engineered for N-channel operation, supporting voltages of up to 30V and currents of 11
TDSON EPHersteller:
Infineon Technologies Ag
Herstellerteil #:
BSC119N03S
Datenblatt:
ECCN (US):
EAR99
HTS:
8541.29.00.95
Automotive:
No
PPAP:
No
EDA/CAD Modelle:
Senden Sie alle Stücklisten an
[email protected],
oder füllen Sie das untenstehende Formular aus, um ein Angebot für BSC119N03S zu erhalten. Garantierte Antwort innerhalb
12hr.
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
The BSC119N03S power MOSFET transistor, crafted by Infineon Technologies, is a reliable and high-performance component designed for a multitude of applications. With a Vds rating of 30V and an Id of 109A, this N-channel MOSFET is capable of handling substantial power demands with ease and efficiency. Its low Rds(on) of 1.7mΩ ensures minimal power loss, making it an ideal choice for motor control, power supplies, and battery management systems. Housed in a TO-220 package, the BSC119N03S offers excellent thermal performance and easy mounting on a heatsink, further enhancing its versatility and practicality in various setups
ECCN (US) | EAR99 | Part Status | Unconfirmed |
HTS | 8541.29.00.95 | Automotive | No |
PPAP | No | Category | Power MOSFET |
Process Technology | OptiMOS | Configuration | Single Quad Drain Triple Source |
Channel Mode | Enhancement | Channel Type | N |
Number of Elements per Chip | 1 | Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±20 | Maximum Continuous Drain Current (A) | 11.9 |
Maximum Drain Source Resistance (mOhm) | 11.9@10V | Typical Gate Charge @ Vgs (nC) | 8@5V |
Typical Input Capacitance @ Vds (pF) | 1030@15V | Maximum Power Dissipation (mW) | 2800 |
Typical Fall Time (ns) | 2.6 | Typical Rise Time (ns) | 3.4 |
Typical Turn-Off Delay Time (ns) | 15 | Typical Turn-On Delay Time (ns) | 3.8 |
Minimum Operating Temperature (°C) | -55 | Maximum Operating Temperature (°C) | 150 |
Mounting | Surface Mount | PCB changed | 8 |
Pin Count | 8 | Lead Shape | No Lead |
After-Sales- und Abwicklungsbezogen
Bezahlverfahren
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | - | - |
Die unten angegebenen Preise dienen nur als Referenz.
2N2222
Stmicroelectronics
1000+ $0,587
BC547
Onsemi
NPN Epitaxial Silicon Transistor
ULN2003
Onsemi
Versatile device for driving heavy loads and motor
IRF3205
Infineon
TO-220AB Tube Power Transistor with N-Channel Silicon
TAN15
Microchip
The TAN is a robust NPN transistor designed for high-frequency applications, capable of operating at up to V and continuous curren