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BSC119N03S +BOM

The BSC119N03S MOSFET is engineered for N-channel operation, supporting voltages of up to 30V and currents of 11

BSC119N03S Allgemeine Beschreibung

The BSC119N03S power MOSFET transistor, crafted by Infineon Technologies, is a reliable and high-performance component designed for a multitude of applications. With a Vds rating of 30V and an Id of 109A, this N-channel MOSFET is capable of handling substantial power demands with ease and efficiency. Its low Rds(on) of 1.7mΩ ensures minimal power loss, making it an ideal choice for motor control, power supplies, and battery management systems. Housed in a TO-220 package, the BSC119N03S offers excellent thermal performance and easy mounting on a heatsink, further enhancing its versatility and practicality in various setups

Hauptmerkmale

  • Ruggedness for harsh environments
  • High voltage and current ratings

Anwendung

  • Reliable control
  • Energy-efficient designs
  • Compact solutions

Spezifikationen

ECCN (US) EAR99 Part Status Unconfirmed
HTS 8541.29.00.95 Automotive No
PPAP No Category Power MOSFET
Process Technology OptiMOS Configuration Single Quad Drain Triple Source
Channel Mode Enhancement Channel Type N
Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 30
Maximum Gate Source Voltage (V) ±20 Maximum Continuous Drain Current (A) 11.9
Maximum Drain Source Resistance (mOhm) 11.9@10V Typical Gate Charge @ Vgs (nC) 8@5V
Typical Input Capacitance @ Vds (pF) 1030@15V Maximum Power Dissipation (mW) 2800
Typical Fall Time (ns) 2.6 Typical Rise Time (ns) 3.4
Typical Turn-Off Delay Time (ns) 15 Typical Turn-On Delay Time (ns) 3.8
Minimum Operating Temperature (°C) -55 Maximum Operating Temperature (°C) 150
Mounting Surface Mount PCB changed 8
Pin Count 8 Lead Shape No Lead

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