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Product BSC150N03LD is a set of two N-Channel MOSFETs in TDSON-8 packages
8-PowerVDFNHersteller:
Infineon Technologies
Herstellerteil #:
BSC150N03LD
Datenblatt:
Series:
OptiMOS™3
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
EDA/CAD Modelle:
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The BSC150N03LD power MOSFET is a versatile component engineered for high-current applications. With a drain-source voltage of 30V and a continuous drain current of 150A, this MOSFET is well-suited for demanding tasks such as electric vehicles, robotics, and power supplies. Its low on-resistance of 5.5mΩ is a standout feature that minimizes power loss and enhances efficiency, making it an excellent choice for energy-conscious applications. The TO-263 package offers convenient mounting and efficient heat dissipation, while the low gate charge of 40nC enables swift switching speeds and reduced switching losses. The MOSFET's junction-to-case thermal resistance of 1.3°C/W ensures that it remains cool during operation, further bolstering its reliability and durability in challenging operating conditions
Series | OptiMOS™3 | Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) | FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V | Current - Continuous Drain (Id) @ 25°C | 8A |
Rds On (Max) @ Id, Vgs | 15mOhm @ 20A, 10V | Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.4nC @ 10V | Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 15V |
Power - Max | 26W | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | BSC150 |
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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
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Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $0,441 | $0,44 |
200+ | $0,171 | $34,20 |
500+ | $0,165 | $82,50 |
1000+ | $0,162 | $162,00 |
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