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Siehe Technische Spezifikationen

FDB44N25TM +BOM

Power MOSFET, N-Channel, UniFETTM, 250V, 44A, 69mΩ, D2PAK

Hersteller:

onsemi
Herstellerteil #:

FDB44N25TM
Datenblatt:

FDB44N25TM Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDB44N25TM

FDB44N25TM Allgemeine Beschreibung

Featuring a tailored design, the FDB44N25TM MOSFET is specifically optimized to excel in power factor correction, flat panel display TV power, ATX, and electronic lamp ballasts. This versatility makes it a valuable component for a wide range of electronic devices and systems requiring efficient power management and reliable switching performance. With its advanced technology and high voltage capabilities, the FDB44N25TM is poised to enhance the functionality and efficiency of various power converter applications

Hauptmerkmale

This N-channel MOSFET has a voltage rating of 250V
Features fast switching speed and low on-resistance
Suitable for high power switching applications requiring low noise

Anwendung

Perfect for various uses.
Versatile and practical choice.
Suitable for multiple applications.

Spezifikationen

Source Content uid	FDB44N25TM	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	42 Weeks, 4 Days
Avalanche Energy Rating (Eas)	2055 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	250 V
Drain Current-Max (ID)	44 A	Drain-source On Resistance-Max	0.069 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	90 pF
JEDEC-95 Code	TO-263AB	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	245
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	307 W
Pulsed Drain Current-Max (IDM)	176 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Turn-off Time-Max (toff)	420 ns
Turn-on Time-Max (ton)	930 ns

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..