Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

Die Bilder dienen nur als Referenz,

Siehe Technische Spezifikationen

FDB52N20TM +BOM

Power MOSFET, N-Channel, UniFETTM, 250V, 52A, 69mΩ, D2PAK

Hersteller:

onsemi
Herstellerteil #:

FDB52N20TM
Datenblatt:

FDB52N20TM Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDB52N20TM

FDB52N20TM Allgemeine Beschreibung

The FDB52N20TM UniFET™ MOSFET offers high voltage capability, utilizing advanced planar stripe and DMOS technology. Through innovative design, this MOSFET effectively minimizes on-state resistance while delivering superior switching performance and increased avalanche energy strength. Ideal for a wide range of applications, this device is particularly well-suited for power converter systems, such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX power units, and electronic lamp ballasts. With its optimized features, the FDB52N20TM MOSFET provides reliable and efficient operation in demanding voltage regulation and power management tasks

Hauptmerkmale

High power rating ( Max. 100W)
Low thermal resistance ( Typ. 50K/W)
High reliability tested
Fast switching times ( Typ. 10ns)

Anwendung

A must-have for everyone.
Versatile and practical.
Useful in various ways.

Spezifikationen

Source Content uid	FDB52N20TM	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	10 Weeks
Avalanche Energy Rating (Eas)	2520 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	200 V
Drain Current-Max (ID)	52 A	Drain-source On Resistance-Max	0.049 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	245	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	357 W	Pulsed Drain Current-Max (IDM)	208 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

TT/Überweisung

Paypal

Western Union

Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

Fedex

UPS

DHL

NTN

Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..