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FDBL0200N100 +BOM

N-Channel PowerTrench® MOSFET, 100V, 300A, 2.0mΩ

FDBL0200N100 Allgemeine Beschreibung

N-Channel PowerTrench® MOSFET, 100V, 300A, 2.0mΩ

Hauptmerkmale

  • New product line introduction
  • Improved circuit design and analysis
  • Rapid prototyping for fast time-to-market
      • High performance computing solutions
      • Data analytics and visualization
      • Cloud-based application development
      • Cybersecurity threat assessment and mitigation
          • Semiconductor material research and development
          • Device modeling and simulation tools
          • Packaging and interconnect design optimization
          • Automotive electronics innovation center
              • Advanced driver assistance systems (ADAS) technologies
              • Machine learning-based predictive maintenance
              • IoT-enabled smart factory automation
              • 5G network infrastructure solutions
                  • Artificial intelligence and computer vision algorithms
                  • High-speed data processing for real-time analytics
                  • Ruggedized hardware for extreme environments
                  • Situational awareness and sensor fusion technologies
                    • Note: Each expression is contained within a single set of

Anwendung

  • Industrial Motor Drive
  • Industrial Power Supply
  • Industrial Automation
  • Battery Operated Tools
  • Battery Protection
  • Solar Inverters
  • Universal Power Supply
  • Energy Inverters
  • Energy Storage
  • Load Switch

Spezifikationen

Source Content uid FDBL0200N100 Pbfree Code Yes
Part Life Cycle Code Active Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 56 Weeks
Date Of Intro 2016-09-09 Avalanche Energy Rating (Eas) 352 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V Drain Current-Max (ID) 300 A
Drain-source On Resistance-Max 0.002 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 41 pF JEDEC-95 Code MO-299A
JESD-30 Code R-PSSO-F2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 245 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 429 W Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed Terminal Form FLAT
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON
Turn-off Time-Max (toff) 59 ns Turn-on Time-Max (ton) 73 ns

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