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FDC3612 +BOM

TSOT-23 package containing N-channel 100V 2.6A Trans MOSFET

Hersteller:

Onsemi
Herstellerteil #:

FDC3612
Datenblatt:

FDC3612 Datenblatt (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDC3612

FDC3612 Allgemeine Beschreibung

The FDC3612 MOSFET is a high-performance N-channel transistor, capable of handling a continuous drain current of 2.6A and a drain-source voltage of 100V. With an on resistance of 125mohm and a threshold voltage of 2.3V, this MOSFET is suitable for a wide range of applications. The operating temperature range of -55°C to +150°C ensures reliable performance in various environmental conditions. The SSOT packaging with 6 pins provides easy integration into circuit designs, while the SMD termination type simplifies assembly processes. The maximum power dissipation of 1.6W and maximum gate-source voltage of 2.3V make this MOSFET a reliable choice for power management applications

Hauptmerkmale

Low gate charge, reduced electromagnetic interference (EMI)
Robust construction, high reliability, low failure rate
Safe operating area (SOA) guarantee, optimized design for reliability and performance

Anwendung

Great for both professionals and DIYers.
Works well in any situation or setting.
A reliable choice for all your needs.

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	2.6 A	Rds On - Drain-Source Resistance	125 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	20 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.6 W
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDC3612	Configuration	Single
Fall Time	3.5 ns	Forward Transconductance - Min	10 S
Height	1.1 mm	Length	2.9 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	3.5 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	23 ns
Typical Turn-On Delay Time	6 ns	Width	1.6 mm
Part # Aliases	FDC3612_NL	Unit Weight	0.001270 oz

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..