Bezahlverfahren
FDC606P +BOM
This P-Channel 1.8V specified MOSFET uses a low voltage PowerTrench process. It has been optimized for battery power management applications.
TSOT-23-6-
Hersteller:
onsemi
-
Herstellerteil #:
FDC606P
-
Datenblatt:
-
Technology:
Si
-
Mounting Style:
SMD/SMT
-
Transistor Polarity:
P-Channel
-
Number Of Channels:
1 Channel
-
EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for FDC606P, guaranteed quotes back within 12hr.
Verfügbarkeit: 7072 Stck
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
FDC606P Allgemeine Beschreibung
This P-Channel 1.8V specified MOSFET uses a low voltage PowerTrench process. It has been optimized for battery power management applications.
Hauptmerkmale
- -6V, 12 A
- RDS(on) = 38 mΩ@ VGS = -2.1 V
- High power and current handling capability
- Fast switching speed and high reliability
- Low RDS(on) = 32 mΩ@ VGS = -4.2 V
- Suitable for industrial applications
Anwendung
- Great for all your needs
- Versatile and reliable
- Perfect for various uses
Spezifikationen
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 12 V |
Id - Continuous Drain Current | 6 A | Rds On - Drain-Source Resistance | 21 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Qg - Gate Charge | 25 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.6 W |
Channel Mode | Enhancement | Tradename | PowerTrench |
Series | FDC606P | Configuration | Single |
Fall Time | 10 ns | Forward Transconductance - Min | 25 S |
Height | 1.1 mm | Length | 2.9 mm |
Product | MOSFET Small Signal | Product Type | MOSFET |
Rise Time | 10 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 89 ns |
Typical Turn-On Delay Time | 11 ns | Width | 1.6 mm |
Part # Aliases | FDC606P_NL | Unit Weight | 0.001270 oz |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
In Stock: 7.072
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | - | - |
Die unten angegebenen Preise dienen nur als Referenz.
Empfohlene Produkte
Top Sellers
-
2N2222
Stmicroelectronics
1000+ $0,587
-
BC547
Onsemi
NPN Epitaxial Silicon Transistor
-
ULN2003
Onsemi
Versatile device for driving heavy loads and motor
-
IRF3205
Infineon
TO-220AB Tube Power Transistor with N-Channel Silicon
-
TAN15
Microchip
The TAN is a robust NPN transistor designed for high-frequency applications, capable of operating at up to V and continuous curren