Bezahlverfahren
FDC6304P +BOM
Dual P-Channel Digital FET -25V, -0.46A, 1.1Ω
TSOT-23-6-
Hersteller:
onsemi
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Herstellerteil #:
FDC6304P
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Datenblatt:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
P-Channel
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Number Of Channels:
2 Channel
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EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for FDC6304P, guaranteed quotes back within 12hr.
Verfügbarkeit: 7229 Stck
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FDC6304P Allgemeine Beschreibung
These P-Channel enhancement mode field effect transistor are produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
Hauptmerkmale
- -25 V, -0.46 A continuous, -1.0 A Peak
- RDS(ON) = 1.5 Ω @ VGS= -2.7 V
- RDS(ON) = 1.1 Ω @ VGS = -4.5 V
- Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V
- Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
Anwendung
- This product is general usage and suitable for many different applications.
Spezifikationen
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 25 V |
Id - Continuous Drain Current | 460 mA | Rds On - Drain-Source Resistance | 1.5 Ohms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Qg - Gate Charge | 1.5 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 900 mW |
Channel Mode | Enhancement | Series | FDC6304P |
Configuration | Dual | Fall Time | 8 ns |
Forward Transconductance - Min | 0.8 S | Height | 1.1 mm |
Length | 2.9 mm | Product | MOSFET Small Signals |
Product Type | MOSFET | Rise Time | 8 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 2 P-Channel | Typical Turn-Off Delay Time | 55 ns |
Typical Turn-On Delay Time | 7 ns | Width | 1.6 mm |
Unit Weight | 0.001270 oz |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
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In Stock: 7.229
Minimum Order: 1
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