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FDC637AN +BOM

N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ

FDC637AN Allgemeine Beschreibung

Engineered for optimal power management, the FDC637AN is a top-of-the-line MOSFET that is specifically designed to meet the demanding requirements of modern electronics. With a focus on minimizing resistance and maximizing switching performance, this device represents a new standard in efficiency and reliability. Its compact form factor makes it an ideal choice for designs that emphasize space-saving solutions, providing exceptional power dissipation capabilities in a small footprint that outshines larger package options

ON Inventar

Hauptmerkmale

  • Rise time: 50ns, Fall time: 60ns
  • Operating voltage range: 5V - 30V
  • Fine pitch leads for easy soldering
ON Originalbestand

Anwendung

  • Applicable in various settings
  • Versatile and reliable
  • Works for different tasks
ON Inventar

Spezifikationen

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 6.2 A Rds On - Drain-Source Resistance 24 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 400 mV
Qg - Gate Charge 16 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.6 W
Channel Mode Enhancement Tradename PowerTrench
Series FDC637AN Configuration Single
Fall Time 13 ns Forward Transconductance - Min 7.4 S
Height 1.1 mm Length 2.9 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 13 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 26 ns
Typical Turn-On Delay Time 9 ns Width 1.6 mm
Part # Aliases FDC637AN_NL Unit Weight 0.001270 oz

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