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Siehe Technische Spezifikationen

FDD3706 +BOM

N-Channel 20 V 14.7A (Ta), 50A (Tc) 3.8W (Ta), 44W (Tc) Surface Mount TO-252 (DPAK)

Hersteller:

Fairchild Semiconductor
Herstellerteil #:

FDD3706
Datenblatt:

FDD3706 Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

End Of Life
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDD3706

FDD3706 Allgemeine Beschreibung

Offering a balance of performance and efficiency, the FDD3706 N-Channel MOSFET is designed to meet the demands of modern power management systems. With its low RDS(ON) and fast switching speed, this MOSFET is optimized for minimizing power losses and improving overall system efficiency. The compact size of the FDD3706 makes it a practical choice for applications where space is at a premium, while its low gate charge ensures smooth operation with both synchronous and conventional switching PWM controllers. Trust the FDD3706 to deliver exceptional performance and efficiency in your DC/DC converter designs

Hauptmerkmale

High voltage rating up to 20V for high-power applications
Low RDS(on) at 9mΩ @ 10V for minimal power loss
Fast switching speed with accurate turn-on and turn-off
Reduced EMI and RFI emissions for improved electromagnetic compatibility
High-quality materials for long lifespan and reliability
Low gate voltage requirement of 4V max for reduced power consumption

Anwendung

Upgrade your everyday tasks
Experience top-notch quality

Spezifikationen

Source Content uid	FDD3706	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Avalanche Energy Rating (Eas)	60 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	20 V
Drain Current-Max (ID)	14.7 A	Drain-source On Resistance-Max	0.009 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	44 W
Pulsed Drain Current-Max (IDM)	60 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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