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FDD4141 +BOM

TO-252-3L MOSFETs ROHS

Hersteller:

Onsemi
Herstellerteil #:

FDD4141
Datenblatt:

FDD4141 Datenblatt (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel

FDD4141 Allgemeine Beschreibung

When it comes to power management, the FDD4141 stands out as a high-performance solution that offers unmatched benefits. Thanks to Fairchild Semiconductor's innovative PowerTrench® technology, this P-Channel MOSFET delivers exceptional performance with a low RDS(on) and optimized Bvdss capability. This means that the FDD4141 is able to provide superior efficiency and reliability in various applications, particularly in converter and inverter setups. With its optimized switching performance capability, this MOSFET helps reduce power dissipation losses, leading to increased energy savings and improved overall performance

Hauptmerkmale

Maximum R_DS(on) = 12.3mΩ at V_GS = -10V, I_D = -12.7A
Maximum R_DS(on) = 18.0mΩ at V_GS = -4.5V, I_D = -10.4A
High performance trench technology for extremely low R_DS(on)
RoHS Compliant

Anwendung

This product is general usage and suitable for many different applications.

Spezifikationen

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	40 V	Id - Continuous Drain Current	50 A
Rds On - Drain-Source Resistance	12.3 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	3 V	Qg - Gate Charge	50 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2.4 W	Channel Mode	Enhancement
Tradename	PowerTrench	Series	FDD4141
Configuration	Single	Fall Time	15 ns
Height	2.39 mm	Length	6.73 mm
Product Type	MOSFET	Rise Time	7 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	38 ns
Typical Turn-On Delay Time	10 ns	Width	6.22 mm
Unit Weight	0.011640 oz

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