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60V N-Channel PowerTrench MOSFET
DPAKHersteller:
Fairchild Semiconductor
Herstellerteil #:
FDD5612
Datenblatt:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Pin Count:
3
Avalanche Energy Rating (Eas):
90 mJ
EDA/CAD Modelle:
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The FDD5612 is a powerful N Channel MOSFET transistor designed for applications requiring high continuous drain current. With a drain source voltage of 60V and an on resistance of 55mohm, this transistor is capable of handling up to 18A of current. The TO-252 case style and SMD termination type make it easy to integrate into electronic circuits. With a power dissipation of 3.8W, this transistor operates efficiently even in extreme temperature ranges from -55°C to +175°C. The threshold voltage of 2.4V and maximum gate-source voltage of 10V ensure reliable performance in a variety of applications
Pbfree Code | Yes | Part Life Cycle Code | Active |
Pin Count | 3 | Reach Compliance Code | |
Avalanche Energy Rating (Eas) | 90 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 18 A | Drain-source On Resistance-Max | 0.055 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-252 |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 100 A | Qualification Status | COMMERCIAL |
Surface Mount | YES | Terminal Finish | MATTE TIN |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $2,340 | $2,34 |
10+ | $2,146 | $21,46 |
30+ | $2,026 | $60,78 |
100+ | $1,902 | $190,20 |
500+ | $1,847 | $923,50 |
1000+ | $1,822 | $1.822,00 |
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