Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

Die Bilder dienen nur als Referenz,

Siehe Technische Spezifikationen

FDG332PZ +BOM

This P-Channel MOSFET usesan advanced low voltage PowerTrench® process. It has been optimized for battery power management applications.

Hersteller:

onsemi
Herstellerteil #:

FDG332PZ
Datenblatt:

FDG332PZ Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

6
Configuration:

SINGLE WITH BUILT-IN DIODE
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDG332PZ

FDG332PZ Allgemeine Beschreibung

I. The FDG332PZ from ON Semiconductor is a high-performance N-channel MOSFET that is ideal for a wide range of applications. Its low gate charge and low on-resistance make it perfect for high-speed switching and amplification circuits, where efficient power management is crucial. With a maximum drain-source voltage of 12 volts and a continuous drain current rating of 1.8 amperes, this MOSFET is well-suited for use in battery-powered devices and other applications where minimizing power losses is important. Its compact SOT-23 package allows for easy integration into small electronic devices and PCB layouts with limited space. Its typical on-resistance of 0.46 ohms at a gate-source voltage of 4.5 volts, and a maximum gate-source threshold voltage of 1.5 volts make it suitable for low-voltage applications where high efficiency and fast switching speeds are essential

Hauptmerkmale

This transistor is designed for high-reliability applications
It features a low thermal impedance and fast switching time

Anwendung

Perfect for all your needs.
Versatile and reliable product.
Great for various applications.

Spezifikationen

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	6	Reach Compliance Code
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	20 V
Drain Current-Max (ID)	0.0026 A	Drain-source On Resistance-Max	0.095 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	115 pF
JESD-30 Code	R-PDSO-G6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	6	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Qualification Status	COMMERCIAL	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

TT/Überweisung

Paypal

Western Union

Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

Fedex

UPS

DHL

NTN

Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..