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FDL100N50F +BOM

High-power N-channel MOSFET transistor in TO-264AA package with 500V and 100A specs

FDL100N50F Allgemeine Beschreibung

With a strong emphasis on performance and efficiency, the FDL100N50F UniFET MOSFET offers unmatched reliability in high voltage applications. Its advanced design features, such as reduced on-state resistance and enhanced reverse recovery capabilities, set it apart from conventional MOSFET options. The UniFET FRFET variant's impressive specifications, including a lightning-fast trr of less than 100nsec and a high reverse dv/dt immunity of 15V/ns, make it the preferred choice for demanding power converter applications

Hauptmerkmale

  • Low noise operation
  • Compact design footprint
  • High reliability rating
  • Robust overcurrent protection
  • Excellent thermal stability
  • Wide operating temperature range

Anwendung

  • Great for a variety of uses.
  • Long-lasting and reliable.

Spezifikationen

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 100 A Rds On - Drain-Source Resistance 43 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 238 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 kW
Channel Mode Enhancement Tradename UniFET
Series FDL100N50F Configuration Single
Fall Time 105 ns Forward Transconductance - Min 95 S
Height 26.4 mm Length 20.2 mm
Product Type MOSFET Rise Time 186 ns
Factory Pack Quantity 25 Subcategory MOSFETs
Transistor Type 1 N-Channel Type RFET
Typical Turn-Off Delay Time 202 ns Typical Turn-On Delay Time 63 ns
Width 5.2 mm Unit Weight 0.352740 oz

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