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Siehe Technische Spezifikationen

FDMC4435BZ +BOM

PowerTrench P-Channel MOSFET with -30V Rating

Hersteller:

ON
Herstellerteil #:

FDMC4435BZ
Datenblatt:

FDMC4435BZ Datenblatt (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDMC4435BZ

FDMC4435BZ Röntgeninspektion

X-Ray inspection ensures product integrity by detecting internal defects without damaging external packaging. It reduces failure rates and enhances production efficiency, making it indispensable in the electronics components industry.

FDMC4435BZ Allgemeine Beschreibung

With its cutting-edge design and superior quality construction, the FDMC4435BZ P-Channel MOSFET offers a reliable solution for demanding applications that require precise power management capabilities. Its advanced features and tailored manufacturing process ensure minimal on-state resistance, allowing for efficient performance and enhanced power control. This makes it a preferred choice for use in a variety of electronic devices, particularly Notebook Computers and Portable Battery Packs

Hauptmerkmale

Ultra-fast switching speed
Low-loss and high-efficiency
Pulse-width modulated for high precision
100% reliability tested for industrial use
Rapid response and recovery time
Advanced trench technology for high performance

Anwendung

Works well in any setting.
Useful for multiple uses.

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	8.5 A	Rds On - Drain-Source Resistance	20 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	53 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.3 W
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDMC4435BZ	Configuration	Single
Fall Time	20 ns	Height	0.8 mm
Length	3.3 mm	Product Type	MOSFET
Rise Time	6 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	34 ns	Typical Turn-On Delay Time	10 ns
Width	3.3 mm	Unit Weight	0.007055 oz

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

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Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..