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FDMC5614P +BOM

The FDMC5614P, a P-Channel MOSFET from ON Semiconductor, is engineered with a current handling capacity of 5

FDMC5614P Allgemeine Beschreibung

Fairchild Semiconductor's FDMC5614P P-Channel MOSFET is engineered for tough power management applications, making it a durable and reliable choice. This MOSFET is designed with an advanced Power Trench process, ensuring it can withstand challenging conditions. Additionally, it offers a wide range of gate drive voltage ratings from 4.5V to 20V, catering to diverse power management needs. With the FDMC5614P, you can trust that your power management applications will be well-supported

Hauptmerkmale

  • High speed and precision
  • Advanced thermal management
  • Robust and reliable performance
  • Compact design with low noise
  • Real-time data acquisition capability
  • Fast switching speed and high efficiency

Anwendung

  • Useful in multiple ways
  • Ideal for many projects
  • Highly adaptable product

Spezifikationen

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 13.5 A Rds On - Drain-Source Resistance 84 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 20 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.1 W
Channel Mode Enhancement Tradename PowerTrench
Series FDMC5614P Configuration Single
Fall Time 11 ns Height 0.8 mm
Length 3.3 mm Product Type MOSFET
Rise Time 11 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 32 ns Typical Turn-On Delay Time 10 ns
Width 3.3 mm Unit Weight 0.007055 oz

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