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FDMC86139P +BOM

100V 15A 67mΩ@10V,4.4A 40W 4V@250uA P Channel Power-33-8 MOSFETs ROHS

FDMC86139P Allgemeine Beschreibung

The FDMC86139P P-Channel MOSFET offers top-of-the-line performance thanks to its advanced PowerTrench® technology. Designed with a focus on reducing on-state resistance, this high-density process ensures superior switching capabilities for a wide range of applications. Whether you need reliable performance in power management or industrial automation, this MOSFET is sure to meet your needs with its optimized design

Hauptmerkmale

  • Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A
  • Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A
  • Very low RDS-on mid voltage P channel silicon technology optimised for low Qg
  • This product is optimised for fast switching applications as well as load switch applications
  • 100% UIL Tested
  • RoHS Compliant

Anwendung

  • This product is general usage and suitable for many different applications.

Spezifikationen

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 4.4 A Rds On - Drain-Source Resistance 67 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 22 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.3 W
Channel Mode Enhancement Tradename PowerTrench
Series FDMC86139P Configuration Single
Fall Time 4 ns Forward Transconductance - Min 12 S
Height 0.8 mm Length 3.3 mm
Product Type MOSFET Rise Time 2.5 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 17 ns
Typical Turn-On Delay Time 11 ns Width 3.3 mm
Unit Weight 0.005832 oz

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