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FDMC8651 +BOM

N-Channel Power Trench® MOSFET 30V, 20A, 6.1mΩ

FDMC8651 Allgemeine Beschreibung

Elevate the efficiency of your DC/DC converters with the FDMC8651, a groundbreaking device meticulously designed to enhance performance. Through the integration of advanced MOSFET construction techniques, this product offers unparalleled optimization of gate charge and capacitance components, effectively reducing switching losses. With its low gate resistance and minimal Miller charge, the FDMC8651 delivers exceptional performance across adaptive and fixed dead time gate drive circuits. Maintaining a very low rDS(on) capability, this device operates seamlessly at sub logic-levels, making it an ideal choice for applications that demand top-tier efficiency and precision

Hauptmerkmale

  • High Current Capability - 30A at 50VDC
  • Low Noise Emissions - 10mV typ
  • Wide Frequency Response - DC to 500kHz
  • Small Footprint Area - 2.5mm x 2.5mm

Anwendung

  • A top-quality solution for anything.
  • Trustworthy and durable for all tasks.
  • Superb performance in any situation.

Spezifikationen

Source Content uid FDMC8651 Pbfree Code Yes
Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 50 Weeks
Avalanche Energy Rating (Eas) 128 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 15 A Drain-source On Resistance-Max 0.0061 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code S-PDSO-N5
JESD-609 Code e4 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 5
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 41 W
Pulsed Drain Current-Max (IDM) 60 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish Nickel/Palladium (Ni/Pd)
Terminal Form NO LEAD Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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