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Siehe Technische Spezifikationen

FDMD8530 +BOM

Dual N-Channel PowerTrench® MOSFET 30V, 201A, 1.25mΩ

Hersteller:

onsemi
Herstellerteil #:

FDMD8530
Datenblatt:

FDMD8530 Datenblatt (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

2 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDMD8530

FDMD8530 Allgemeine Beschreibung

The FDMD8530 is a powerful device that features two 30V N-Channel MOSFETs in a dual power package, making it suitable for a wide range of applications. With the high side source and low side drain internally connected, this device is perfect for half/full bridge configurations. Additionally, the low source inductance package and low rDS(on)/Qg FOM silicon ensure efficient and reliable performance

Hauptmerkmale

Ultra-compact Design
Fault-tolerant Architecture
High Efficiency Power Conversion
Multimode Operation Capability
Silicon Carbide MOSFET Support
Low EMI Noise Generation

Anwendung

Suitable for multiple applications.
A reliable choice for many projects.
Adaptable to different situations.

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	201 A	Rds On - Drain-Source Resistance	1.8 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	106 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	78 W
Channel Mode	Enhancement	Tradename	PowerTrench Power Clip
Series	FDMD8530	Configuration	Dual
Fall Time	21 ns	Forward Transconductance - Min	259 S
Height	0.8 mm	Length	3.3 mm
Product Type	MOSFET	Rise Time	13 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	2 N-Channel	Typical Turn-Off Delay Time	71 ns
Typical Turn-On Delay Time	14 ns	Width	3.3 mm
Unit Weight	0.003346 oz	Source Content uid	FDMD8530
Pbfree Code	Yes	Part Life Cycle Code	End Of Life
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	661 mJ	Case Connection	DRAIN SOURCE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (Abs) (ID)	201 A
Drain Current-Max (ID)	201 A	Drain-source On Resistance-Max	0.00125 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	310 pF
JEDEC-95 Code	MO-240AA	JESD-30 Code	R-PDSO-N8
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	78 W
Pulsed Drain Current-Max (IDM)	1047 A	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	NO LEAD
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Turn-off Time-Max (toff)	148 ns	Turn-on Time-Max (ton)	49 ns

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